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1 oct-30-1997 bsm 400 ga 120 dn2 igbt power module ? single switch ? including fast free-wheeling diodes ? package with insulated metal base plate type v ce i c package ordering code bsm 400 ga 120 dn2 1200 v 550 a single switch c67070-a2302-a70 bsm 400 ga 120 dn2 s 1200 v 550 a ssw sense 1 c67070-a2308-a70 maximum ratings parameter symbol values unit collector-emitter voltage v ce 1200 v collector-gate voltage r ge = 20 k w v cgr 1200 gate-emitter voltage v ge 20 dc collector current t c = 25 c t c = 80 c i c 400 550 a pulsed collector current, t p = 1 ms t c = 25 c t c = 125 c i cpuls 800 1100 power dissipation per igbt t c = 25 c p to t 2700 w chip temperature t j + 150 c storage temperature t stg -40 ... + 125 thermal resistance, chip case r thjc 0.045 k/w diode thermal resistance, chip case r thjc d 0.09 insulation test voltage, t = 1min. v is 2500 vac creepage distance - 20 mm clearance - 11 din humidity category, din 40 040 - f sec iec climatic category, din iec 68-1 - 40 / 125 / 56
2 oct-30-1997 bsm 400 ga 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics gate threshold voltage v ge = v ce, i c = 16 ma v ge(th) 4.5 5.5 6.5 v collector-emitter saturation voltage v ge = 15 v, i c = 400 a, t j = 25 c v ge = 15 v, i c = 400 a, t j = 125 c v ce(sat) - - 3.1 2.5 3.7 3 zero gate voltage collector current v ce = 1200 v, v ge = 0 v, t j = 25 c v ce = 1200 v, v ge = 0 v, t j = 125 c i ces - - 24 6 - 8 ma gate-emitter leakage current v ge = 20 v, v ce = 0 v i ges - - 400 na ac characteristics transconductance v ce = 20 v, i c = 400 a g fs 216 - - s input capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c iss - 26 - nf output capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c oss - 4 - reverse transfer capacitance v ce = 25 v, v ge = 0 v, f = 1 mhz c rss - 2 -
3 oct-30-1997 bsm 400 ga 120 dn2 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. switching characteristics, inductive load at t j = 125 c turn-on delay time v cc = 600 v, v ge = 15 v, i c = 400 a r gon = 2.7 w t d(on) - 100 200 ns rise time v cc = 600 v, v ge = 15 v, i c = 400 a r gon = 2.7 w t r - 110 220 turn-off delay time v cc = 600 v, v ge = -15 v, i c = 400 a r goff = 2.7 w t d(off) - 550 800 fall time v cc = 600 v, v ge = -15 v, i c = 400 a r goff = 2.7 w t f - 80 120 free-wheel diode diode forward voltage i f = 400 a, v ge = 0 v, t j = 25 c i f = 400 a, v ge = 0 v, t j = 125 c v f - - 1.8 2.3 - 2.8 v reverse recovery time i f = 400 a, v r = -600 v, v ge = 0 v d i f / dt = -3000 a/s, t j = 125 c t rr - 0.6 - s reverse recovery charge i f = 400 a, v r = -600 v, v ge = 0 v d i f / dt = -3000 a/s t j = 25 c t j = 125 c q rr - - 45 16 - - c
4 oct-30-1997 bsm 400 ga 120 dn2 power dissipation p tot = | ( t c ) parameter: t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 w 2800 p tot safe operating area i c = | ( v ce ) parameter: d = 0 , t c = 25 c , t j 150 c 0 10 1 10 2 10 3 10 4 10 a i c 10 0 10 1 10 2 10 3 v v ce dc 10 ms 1 ms 100 s t p = 26.0 s collector current i c = | ( t c ) parameter: v ge 3 15 v , t j 150 c 0 20 40 60 80 100 120 c 160 t c 0 50 100 150 200 250 300 350 400 450 500 a 600 i c transient thermal impedance igbt z th jc = | ( t p ) parameter: d = t p / t -5 10 -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
5 oct-30-1997 bsm 400 ga 120 dn2 typ. output characteristics i c = f (v ce ) parameter: t p = 80 s, t j = 25 c 0 1 2 3 v 5 v ce 0 100 200 300 400 500 600 a 800 i c 17v 15v 13v 11v 9v 7v typ. output characteristics i c = f (v ce ) parameter: t p = 80 s, t j = 125 c 0 1 2 3 v 5 v ce 0 100 200 300 400 500 600 a 800 i c 17v 15v 13v 11v 9v 7v typ. transfer characteristics i c = f (v ge ) parameter: t p = 80 s, v ce = 20 v 0 2 4 6 8 10 v 14 v ge 0 100 200 300 400 500 600 a 800 i c
6 oct-30-1997 bsm 400 ga 120 dn2 typ. gate charge v ge = | ( q gate ) parameter: i c puls = 400 a 0 400 800 1200 1600 2000 nc 2800 q gate 0 2 4 6 8 10 12 14 16 v 20 v ge 800 v 600 v typ. capacitances c = f ( v ce ) parameter: v ge = 0 v, f = 1 mhz 0 5 10 15 20 25 30 v 40 v ce -1 10 0 10 1 10 2 10 nf c ciss coss crss reverse biased safe operating area i cpuls = f(v ce ) , t j = 150c parameter: v ge = 15 v, t p 1 ms, l < 20 nh 0 200 400 600 800 1000 1200 v 1600 v ce 0.0 0.5 1.0 1.5 2.5 i cpuls i c di/dt = 1000a/s 3000a/s 5000a/s short circuit safe operating area i csc = f(v ce ) , t j = 150c parameter: v ge = 15 v, t sc 10 s, l < 20 nh 0 200 400 600 800 1000 1200 v 1600 v ce 0 2 4 6 8 12 i csc / i c circuit: >1s time between short short circuit: <1000 allowed number of di/dt = 1000a/s 3000a/s 5000a/s
7 oct-30-1997 bsm 400 ga 120 dn2 typ. switching time i = f (i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 2.7 w 0 100 200 300 400 500 600 700 a 900 i c 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf typ. switching time t = f (r g ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, i c = 400 a 0 5 10 15 20 w 30 r g 1 10 2 10 3 10 4 10 ns t tdon tr tdoff tf typ. switching losses e = f (i c ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, r g = 2.7 w 0 100 200 300 400 500 600 700 a 900 i c 0 50 100 150 mws 250 e eon eoff typ. switching losses e = f (r g ) , inductive load , t j = 125c par.: v ce = 600 v, v ge = 15 v, i c = 400 a 0 5 10 15 20 w 30 r g 0 50 100 150 mws 250 e eon eoff
8 oct-30-1997 bsm 400 ga 120 dn2 forward characteristics of fast recovery reverse diode i f = f(v f ) parameter: t j 0.0 0.5 1.0 1.5 2.0 v 3.0 v f 0 100 200 300 400 500 600 a 800 i f t j =25c =125c j t transient thermal impedance diode z th jc = | ( t p ) parameter: d = t p / t -5 10 -4 10 -3 10 -2 10 -1 10 0 10 k/w z thjc 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
9 oct-30-1997 bsm 400 ga 120 dn2 circuit diagram package outlines dimensions in mm weight: 420 g
technische information / technical information igbt-module igbt-modules BSM400GA120DN2 typ. l sce 20 nh modulinduktivit?t stray inductance module anhang c-serie appendix c-series geh?use spezifische werte housing specific values geh?usema?e c-serie package outline c-series appendix c-series appendix_c-serie_BSM400GA120DN2.xls 2001-09-20
nutzungsbedingungen die in diesem produktdatenblatt enthaltenen daten sind ausschlie? lich fr technisch geschultes fachpersonal bestimmt. die beurteilung der geeignetheit dieses produktes fr die von ihnen an visierte anwendung sowie die beurteilung der vollst?ndigkeit der bereitgestellten produktdaten fr diese anwendung obliegt ihnen bzw. ihren technischen abteilungen. in diesem produktdatenblatt werden diejenigen merkmale beschrieben, fr die wir eine liefervertragliche gew?hrleistung bernehmen. eine solche gew?hrleistung richtet sich ausschlie?lich nach ma?gabe der im jeweiligen liefervertrag enthaltenen bestimmungen. garantien jeglicher art werden fr das produkt und dessen eigenschaften keinesfalls bernommen. sollten sie von uns produktinformationen ben?tigen, die ber den inhalt dieses produktdatenblatts hinausgehen und insbesondere eine spezifische verwendung und den einsatz dies es produktes betreffen, setzen sie sich bitte mit dem fr sie zust?ndigen vertriebsbro in verbindung (siehe www.eupec.com, ve rtrieb&kontakt). fr interessenten halten wir application notes bereit. aufgrund der technischen anforderungen k?nnte unser produkt gesundheitsgef?hrdende substanzen enthalten. bei rckfragen zu den in diesem produkt jeweils enthaltenen substanzen setzen si e sich bitte ebenfalls mit dem fr sie zust?ndigen vertriebsb ro in verbindung. sollten sie beabsichtigen, das produkt in gesundheits- oder lebensgef?hrdenden oder lebenserhaltenden anwendungsbereichen einzusetzen, bitten wir um mitteilung. wir weisen darauf hin, dass wir fr diese f?lle - die gemeinsame durchfhrung eines risiko- und qualit?tsassessments; - den abschluss von speziellen qualit?tssicherungsvereinbarungen; - die gemeinsame einfhrung von ma?nahmen zu einer laufenden produktbeobachtung dringend empfehlen und gegebenenfalls die belieferung von der umsetzung solcher ma?nahmen abh?ngig machen. soweit erforderlich, bitten wir sie, entsprechende hinweise an ihre kunden zu geben. inhaltliche ?nderungen dieses produktdatenblatts bleiben vorbehalten. terms & conditions of usage the data contained in this product data sheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the produ ct data with respect to such application. this product data sheet is describing the characteristics of this product for which a warranty is granted. any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. there will be no guarantee of any kind for the product and its characteristics. should you require product information in excess of the data giv en in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.eupec.com, sales&contact). f or those that are specifically interested we may provide application notes. due to technical requirements our product may contain dangerous substances. for information on the types in question please contact the sales office, which is responsible for you. should you intend to use the product in health or live endange ring or life support applications, please notify. please note, th at for any such applications we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery depended on the realization of any such measures. if and to the extent necessary, please forward equivalent notices to your customers. changes of this product data sheet are reserved.

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